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18N20 MOSFET Transistor

The 18N20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 18N20 transistor as follows.

Circuit diagram symbol of the 18N20 transistor

18N20 Transistor Specification

Transistor Code 18N20
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251_TO252_TO220
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.16Ohm
Power Dissipation (Maximum) PD 110W
Drain-Source Capacitance 81.2pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 21.1nS

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