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12P10 MOSFET Transistor

The 12P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 12P10 transistor as follows.

Circuit diagram symbol of the 12P10 transistor

12P10 Transistor Specification

Transistor Code 12P10
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-263_SOP-8_TO-251_
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.24Ohm
Power Dissipation (Maximum) PD 65W
Drain-Source Capacitance 220pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 160nS

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