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12NN10 MOSFET Transistor

The 12NN10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 12NN10 transistor as follows.

Circuit diagram symbol of the 12NN10 transistor

12NN10 Transistor Specification

Transistor Code 12NN10
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOP-8
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.15Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 60pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7nS

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