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12N80 MOSFET Transistor

The 12N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 12N80 transistor as follows.

Circuit diagram symbol of the 12N80 transistor

12N80 Transistor Specification

Transistor Code 12N80
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-3P_TO-247_TO-230_
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.75Ohm
Power Dissipation (Maximum) PD 390W
Drain-Source Capacitance 315pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS

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