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12N06Z MOSFET Transistor

The 12N06Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 12N06Z transistor as follows.

Circuit diagram symbol of the 12N06Z transistor

12N06Z Transistor Specification

Transistor Code 12N06Z
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.08Ohm
Power Dissipation (Maximum) PD 30W
Drain-Source Capacitance 75pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 35nS

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