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11N90 MOSFET Transistor

The 11N90 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 11N90 transistor as follows.

Circuit diagram symbol of the 11N90 transistor

11N90 Transistor Specification

Transistor Code 11N90
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-3P_TO-3PN_TO-220_
Drain-Source Voltage (Maximum) VDS 900V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.91Ohm
Power Dissipation (Maximum) PD 215W
Drain-Source Capacitance 215pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 130nS

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