11N50 MOSFET Transistor

The 11N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 11N50 transistor as follows.

11N50 Transistor Specification

Transistor Code		11N50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220_TO-220F_TO-22
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.48Ohm
Power Dissipation (Maximum)	PD	195W
Drain-Source Capacitance		185pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		70nS

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