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110N10 MOSFET Transistor

The 110N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 110N10 transistor as follows.

Circuit diagram symbol of the 110N10 transistor

110N10 Transistor Specification

Transistor Code 110N10
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 110A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.009Ohm
Power Dissipation (Maximum) PD 220W
Drain-Source Capacitance 380pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 24nS

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