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10N65AF MOSFET Transistor

The 10N65AF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 10N65AF transistor as follows.

Circuit diagram symbol of the 10N65AF transistor

10N65AF Transistor Specification

Transistor Code 10N65AF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.85Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 146.5pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 26.2nS

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