ZXTN5551Z NPN Transistor

The ZXTN5551Z is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ZXTN5551Z transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ZXTN5551Z transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ZXTN5551Z transistor as follows.

ZXTN5551Z Transistor Specification

Transistor Code		ZXTN5551Z
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT89-3L
Collector Power Dissipation (Maximum)	PC	1.2W
Collector-Emitter Voltage (Maximum)	VCE	160V
Collector Current (Maximum)	IC	0.6A
Forward Current Transfer Ratio (hFE Value)		80
Transition Frequency	FT	130MHz

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