ZXTN5551G NPN Transistor

The ZXTN5551G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ZXTN5551G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ZXTN5551G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ZXTN5551G transistor as follows.

ZXTN5551G Transistor Specification

Transistor Code		ZXTN5551G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT223
Collector Power Dissipation (Maximum)	PC	2W
Collector-Emitter Voltage (Maximum)	VCE	160V
Collector Current (Maximum)	IC	0.6A
Forward Current Transfer Ratio (hFE Value)		80
Transition Frequency	FT	130MHz

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