ZTX855 NPN Transistor

The ZTX855 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ZTX855 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ZTX855 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ZTX855 transistor as follows.

ZTX855 Transistor Specification

Transistor Code		ZTX855
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO226
Collector Power Dissipation (Maximum)	PC	1.2W
Collector-Base Voltage (Maximum)	VCB	250V
Collector-Emitter Voltage (Maximum)	VCE	150V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	90MHz
Collector Capacitance	CC	22pF

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