ZBD857 NPN Transistor

The ZBD857 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ZBD857 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ZBD857 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ZBD857 transistor as follows.

ZBD857 Transistor Specification

Transistor Code		ZBD857
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO126
Collector Power Dissipation (Maximum)	PC	25W
Collector-Base Voltage (Maximum)	VCB	330V
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	80MHz
Collector Capacitance	CC	11pF

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