XB112 PNP Transistor

The XB112 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the XB112 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The XB112 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the XB112 transistor as follows.

XB112 Transistor Specification

Transistor Code		XB112
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO1
Collector Power Dissipation (Maximum)	PC	0.09W
Collector-Base Voltage (Maximum)	VCB	16V
Collector-Emitter Voltage (Maximum)	VCE	12V
Operating Junction Temperature (Maximum)	TJ	55°C
Emitter-Base Voltage (Maximum)	VEB	12V
Forward Current Transfer Ratio (hFE Value)		20

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