WTD1386 PNP Transistor

The WTD1386 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the WTD1386 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The WTD1386 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the WTD1386 transistor as follows.

WTD1386 Transistor Specification

Transistor Code		WTD1386
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO252
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		82
Transition Frequency	FT	120MHz
Collector Capacitance	CC	60pF

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