WT5650 NPN Transistor

The WT5650 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the WT5650 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The WT5650 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the WT5650 transistor as follows.

WT5650 Transistor Specification

Transistor Code		WT5650
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		DISK55
Collector Power Dissipation (Maximum)	PC	1250W
Collector-Emitter Voltage (Maximum)	VCE	700V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)	TJ	140°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		6

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