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WBP13005D1 NPN Transistor

The WBP13005D1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the WBP13005D1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The WBP13005D1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the WBP13005D1 transistor as follows.

Circuit diagram symbol of the WBP13005D1 transistor

WBP13005D1 Transistor Specification

Transistor Code WBP13005D1
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-220HW
Collector Power Dissipation (Maximum) PC 75W
Collector-Base Voltage (Maximum) VCB 700V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 4MHz
Collector Capacitance CC 6.5pF

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More Transistors Datasheets in TO-220HW Package

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