UPTB530 NPN Transistor

The UPTB530 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the UPTB530 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The UPTB530 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the UPTB530 transistor as follows.

UPTB530 Transistor Specification

Transistor Code		UPTB530
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.75W
Collector-Base Voltage (Maximum)	VCB	350V
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	15MHz
Collector Capacitance	CC	50pF

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