UMT1009 NPN Transistor

The UMT1009 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the UMT1009 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The UMT1009 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the UMT1009 transistor as follows.

UMT1009 Transistor Specification

Transistor Code		UMT1009
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	125W
Collector-Base Voltage (Maximum)	VCB	500V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		12
Transition Frequency	FT	6MHz
Collector Capacitance	CC	200pF

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