UMT1006 NPN Transistor

The UMT1006 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the UMT1006 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The UMT1006 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the UMT1006 transistor as follows.

UMT1006 Transistor Specification

Transistor Code		UMT1006
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	100W
Collector-Base Voltage (Maximum)	VCB	400V
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		12
Transition Frequency	FT	6MHz
Collector Capacitance	CC	150pF

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