U2TG410 NPN Transistor

The U2TG410 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the U2TG410 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The U2TG410 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the U2TG410 transistor as follows.

U2TG410 Transistor Specification

Transistor Code		U2TG410
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO202
Collector Power Dissipation (Maximum)	PC	25W
Collector-Base Voltage (Maximum)	VCB	120V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		500
Transition Frequency	FT	20MHz
Collector Capacitance	CC	150pF

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