U2TD430 NPN Transistor

The U2TD430 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the U2TD430 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The U2TD430 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the U2TD430 transistor as follows.

U2TD430 Transistor Specification

Transistor Code		U2TD430
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO202
Collector Power Dissipation (Maximum)	PC	15W
Collector-Base Voltage (Maximum)	VCB	350V
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		300
Transition Frequency	FT	20MHz
Collector Capacitance	CC	100pF

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