TPC5658NND03 NPN Transistor

The TPC5658NND03 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the TPC5658NND03 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The TPC5658NND03 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the TPC5658NND03 transistor as follows.

TPC5658NND03 Transistor Specification

Transistor Code		TPC5658NND03
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		WBFBP-03B
Transistor SMD Code		BQ_BR_BS
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	180MHz
Collector Capacitance	CC	3.5pF

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