TN835 NPN Transistor

The TN835 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the TN835 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The TN835 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the TN835 transistor as follows.

TN835 Transistor Specification

Transistor Code		TN835
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO226
Collector Power Dissipation (Maximum)	PC	0.35W
Collector-Base Voltage (Maximum)	VCB	25V
Collector-Emitter Voltage (Maximum)	VCE	20V
Operating Junction Temperature (Maximum)	TJ	135°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	300MHz
Collector Capacitance	CC	4pF

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