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TI809 NPN Transistor

The TI809 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the TI809 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The TI809 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the TI809 transistor as follows.

Circuit diagram symbol of the TI809 transistor

TI809 Transistor Specification

Transistor Code TI809
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO89-3
Collector Power Dissipation (Maximum) PC 0.35W
Collector-Base Voltage (Maximum) VCB 45V
Collector-Emitter Voltage (Maximum) VCE 45V
Collector Current (Maximum) IC 0.03A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 50
Transition Frequency FT 40MHz
Collector Capacitance CC 5pF

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More Transistors Datasheets in TO89-3 Package

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