TH560 NPN Transistor

The TH560 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the TH560 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The TH560 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the TH560 transistor as follows.

TH560 Transistor Specification

Transistor Code		TH560
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT121
Transistor SMD Code		SD1730
Collector Power Dissipation (Maximum)	PC	320W
Collector-Base Voltage (Maximum)	VCB	70V
Collector-Emitter Voltage (Maximum)	VCE	35V
Collector Current (Maximum)	IC	16A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	30MHz
Collector Capacitance	CC	450pF

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