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TH513 NPN Transistor

The TH513 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the TH513 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The TH513 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the TH513 transistor as follows.

Circuit diagram symbol of the TH513 transistor

TH513 Transistor Specification

Transistor Code TH513
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT120
Transistor SMD Code TH513
Collector Power Dissipation (Maximum) PC 127W
Collector-Base Voltage (Maximum) VCB 110V
Collector-Emitter Voltage (Maximum) VCE 55V
Collector Current (Maximum) IC 3.25A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 19
Transition Frequency FT 30MHz
Collector Capacitance CC 100pF

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