TFN1386L PNP Transistor

The TFN1386L is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the TFN1386L transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The TFN1386L transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the TFN1386L transistor as follows.

TFN1386L Transistor Specification

Transistor Code		TFN1386L
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		BH
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	120MHz
Collector Capacitance	CC	60pF

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