TEC8012E PNP Transistor

The TEC8012E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the TEC8012E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The TEC8012E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the TEC8012E transistor as follows.

TEC8012E Transistor Specification

Transistor Code		TEC8012E
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.625W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		78
Transition Frequency	FT	150MHz
Collector Capacitance	CC	7pF

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