TD13005DSMD NPN Transistor

The TD13005DSMD is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the TD13005DSMD transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The TD13005DSMD transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the TD13005DSMD transistor as follows.

TD13005DSMD Transistor Specification

Transistor Code		TD13005DSMD
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO252
Collector Power Dissipation (Maximum)	PC	30W
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	4MHz

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