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T5609 NPN Transistor

The T5609 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the T5609 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The T5609 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the T5609 transistor as follows.

Circuit diagram symbol of the T5609 transistor

T5609 Transistor Specification

Transistor Code T5609
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92L
Collector Power Dissipation (Maximum) PC 0.75W
Collector-Base Voltage (Maximum) VCB 25V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 190MHz
Collector Capacitance CC 22pF

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