T2016 PNP Transistor

The T2016 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the T2016 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The T2016 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the T2016 transistor as follows.

T2016 Transistor Specification

Transistor Code		T2016
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO9
Collector Power Dissipation (Maximum)	PC	0.045W
Collector-Base Voltage (Maximum)	VCB	10V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	100°C
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	10MHz
Collector Capacitance	CC	3pF

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