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ST2SD882U-P NPN Transistor

The ST2SD882U-P is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ST2SD882U-P transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ST2SD882U-P transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ST2SD882U-P transistor as follows.

Circuit diagram symbol of the ST2SD882U-P transistor

ST2SD882U-P Transistor Specification

Transistor Code ST2SD882U-P
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO126
Collector Power Dissipation (Maximum) PC 36W
Collector-Base Voltage (Maximum) VCB 120V
Collector-Emitter Voltage (Maximum) VCE 100V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 3MHz

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