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SS8550W PNP Transistor

The SS8550W is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the SS8550W transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The SS8550W transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the SS8550W transistor as follows.

Circuit diagram symbol of the SS8550W transistor

SS8550W Transistor Specification

Transistor Code SS8550W
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT-323
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 1.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 120
Transition Frequency FT 100MHz
Collector Capacitance CC 20pF

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More Transistors Datasheets in SOT-323 Package

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