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SMBT35200MT1G PNP Transistor

The SMBT35200MT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the SMBT35200MT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The SMBT35200MT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the SMBT35200MT1G transistor as follows.

Circuit diagram symbol of the SMBT35200MT1G transistor

SMBT35200MT1G Transistor Specification

Transistor Code SMBT35200MT1G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT457
Transistor SMD Code G4
Collector Power Dissipation (Maximum) PC 0.63W
Collector-Base Voltage (Maximum) VCB 55V
Collector-Emitter Voltage (Maximum) VCE 35V
Collector Current (Maximum) IC 2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 100MHz
Collector Capacitance CC 100pF

UXPython is not the creator or an official representative of the SMBT35200MT1G PNP transistor. You can download the official SMBT35200MT1G PNP transistor datasheet to get more infromation about this transistor.

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