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SGSD93E NPN Transistor

The SGSD93E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the SGSD93E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The SGSD93E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the SGSD93E transistor as follows.

Circuit diagram symbol of the SGSD93E transistor

SGSD93E Transistor Specification

Transistor Code SGSD93E
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220
Collector Power Dissipation (Maximum) PC 80W
Collector-Base Voltage (Maximum) VCB 160V
Collector-Emitter Voltage (Maximum) VCE 140V
Collector Current (Maximum) IC 12A
Operating Junction Temperature (Maximum) TJ 175°C
Forward Current Transfer Ratio (hFE Value) 1000

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