SGSD110 NPN Transistor

The SGSD110 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the SGSD110 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The SGSD110 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the SGSD110 transistor as follows.

SGSD110 Transistor Specification

Transistor Code		SGSD110
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TOP3
Collector Power Dissipation (Maximum)	PC	130W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		15

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