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SFT6678M NPN Transistor

The SFT6678M is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the SFT6678M transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The SFT6678M transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the SFT6678M transistor as follows.

Circuit diagram symbol of the SFT6678M transistor

SFT6678M Transistor Specification

Transistor Code SFT6678M
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO254
Collector Power Dissipation (Maximum) PC 175W
Collector-Base Voltage (Maximum) VCB 650V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 8V
Forward Current Transfer Ratio (hFE Value) 8
Collector Capacitance CC 500pF

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