SFT2010 NPN Transistor

The SFT2010 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the SFT2010 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The SFT2010 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the SFT2010 transistor as follows.

SFT2010 Transistor Specification

Transistor Code		SFT2010
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	600W
Collector-Base Voltage (Maximum)	VCB	250V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		5
Transition Frequency	FT	30MHz
Collector Capacitance	CC	1200pF

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