SDTC114YET1G NPN Transistor

The SDTC114YET1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the SDTC114YET1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The SDTC114YET1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the SDTC114YET1G transistor as follows.

SDTC114YET1G Transistor Specification

Transistor Code		SDTC114YET1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT416
Transistor SMD Code		8D
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		80

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