SBN13003HB NPN Transistor

The SBN13003HB is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the SBN13003HB transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The SBN13003HB transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the SBN13003HB transistor as follows.

SBN13003HB Transistor Specification

Transistor Code		SBN13003HB
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	1W
Collector-Base Voltage (Maximum)	VCB	850V
Collector-Emitter Voltage (Maximum)	VCE	530V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		6

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