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SBCP68T1G NPN Transistor

The SBCP68T1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the SBCP68T1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The SBCP68T1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the SBCP68T1G transistor as follows.

Circuit diagram symbol of the SBCP68T1G transistor

SBCP68T1G Transistor Specification

Transistor Code SBCP68T1G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT223
Transistor SMD Code CA
Collector Power Dissipation (Maximum) PC 1.5W
Collector-Base Voltage (Maximum) VCB 25V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 85
Transition Frequency FT 60MHz
Collector Capacitance CC 15pF

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