SBC846BDW1T1G NPN Transistor

The SBC846BDW1T1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the SBC846BDW1T1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The SBC846BDW1T1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the SBC846BDW1T1G transistor as follows.

SBC846BDW1T1G Transistor Specification

Transistor Code		SBC846BDW1T1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT363
Transistor SMD Code		1B
Collector Power Dissipation (Maximum)	PC	0.38W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	65V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	100MHz
Collector Capacitance	CC	4.5pF

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