S8550M PNP Transistor

The S8550M is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the S8550M transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The S8550M transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the S8550M transistor as follows.

S8550M Transistor Specification

Transistor Code		S8550M
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		HY4B_HY4C_HY4D
Collector Power Dissipation (Maximum)	PC	0.45W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		85
Transition Frequency	FT	100MHz
Collector Capacitance	CC	15pF

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