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S2000N NPN Transistor

The S2000N is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the S2000N transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The S2000N transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the S2000N transistor as follows.

Circuit diagram symbol of the S2000N transistor

S2000N Transistor Specification

Transistor Code S2000N
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-3PH
Collector Power Dissipation (Maximum) PC 50W
Collector-Base Voltage (Maximum) VCB 1500V
Collector-Emitter Voltage (Maximum) VCE 700V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 4.5
Transition Frequency FT 2MHz
Collector Capacitance CC 95pF

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