RTE13LFM NPN Transistor

The RTE13LFM is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the RTE13LFM transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The RTE13LFM transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the RTE13LFM transistor as follows.

RTE13LFM Transistor Specification

Transistor Code		RTE13LFM
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-363
Transistor SMD Code		X01
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		250
Transition Frequency	FT	200MHz
Collector Capacitance	CC	2.5pF

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