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RS-2013 NPN Transistor

The RS-2013 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the RS-2013 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The RS-2013 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the RS-2013 transistor as follows.

Circuit diagram symbol of the RS-2013 transistor

RS-2013 Transistor Specification

Transistor Code RS-2013
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package X55-1
Collector Power Dissipation (Maximum) PC 0.36W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 250MHz
Collector Capacitance CC 8pF

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