RCP111D NPN Transistor

The RCP111D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the RCP111D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The RCP111D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the RCP111D transistor as follows.

RCP111D Transistor Specification

Transistor Code		RCP111D
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO202
Collector Power Dissipation (Maximum)	PC	6.25W
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	0.15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	40MHz
Collector Capacitance	CC	2.3pF

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