RCP111C NPN Transistor

The RCP111C is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the RCP111C transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The RCP111C transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the RCP111C transistor as follows.

RCP111C Transistor Specification

Transistor Code		RCP111C
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO202
Collector Power Dissipation (Maximum)	PC	6.25W
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	0.15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	40MHz
Collector Capacitance	CC	2.3pF

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