R8966 NPN Transistor

The R8966 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the R8966 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The R8966 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the R8966 transistor as follows.

R8966 Transistor Specification

Transistor Code		R8966
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		X55-1
Collector Power Dissipation (Maximum)	PC	0.36W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	250MHz
Collector Capacitance	CC	8pF

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